Please use this identifier to cite or link to this item:
https://dipositint.ub.edu/dspace/handle/2445/25462
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Anopchenko, Aleksei | cat |
dc.contributor.author | Tengattini, Andrea | cat |
dc.contributor.author | Marconi, Alessandro | cat |
dc.contributor.author | Prtljaga, Nikola | cat |
dc.contributor.author | Ramírez Ramírez, Joan Manel | cat |
dc.contributor.author | Jambois, Olivier | cat |
dc.contributor.author | Berencén Ramírez, Yonder Antonio | cat |
dc.contributor.author | Navarro Urrios, Daniel | cat |
dc.contributor.author | Garrido Fernández, Blas | cat |
dc.contributor.author | Milesi, F. | cat |
dc.contributor.author | Colonna, Jean-Philippe | cat |
dc.contributor.author | Fedeli, Jean-Marc | cat |
dc.contributor.author | Pavesi, Lorenzo | cat |
dc.date.accessioned | 2012-05-11T11:19:46Z | - |
dc.date.available | 2012-05-11T11:19:46Z | - |
dc.date.issued | 2012-03-21 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/2445/25462 | - |
dc.description.abstract | High quantum efficiency erbium doped silicon nanocluster (Si-NC:Er) light emitting diodes (LEDs) were grown by low-pressure chemical vapor deposition (LPCVD) in a complementary metal-oxide-semiconductor (CMOS) line. Erbium (Er) excitation mechanisms under direct current (DC) and bipolar pulsed electrical injection were studied in a broad range of excitation voltages and frequencies. Under DC excitation, Fowler-Nordheim tunneling of electrons is mediated by Er-related trap states and electroluminescence originates from impact excitation of Er ions. When the bipolar pulsed electrical injection is used, the electron transport and Er excitation mechanism change. Sequential injection of electrons and holes into silicon nanoclusters takes place and nonradiative energy transfer to Er ions is observed. This mechanism occurs in a range of lower driving voltages than those observed in DC and injection frequencies higher than the Er emission rate. | eng |
dc.format.extent | 5 p. | - |
dc.format.mimetype | application/pdf | - |
dc.language.iso | eng | eng |
dc.publisher | American Institute of Physics | - |
dc.relation.isformatof | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.3694680 | cat |
dc.relation.ispartof | Journal of Applied Physics, 2012, vol. 111, núm. 6, p. 063102-1-063102-5 | - |
dc.relation.uri | http://dx.doi.org/10.1063/1.3694680 | - |
dc.rights | (c) American Institute of Physics, 2012 | - |
dc.source | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) | - |
dc.subject.classification | Fotònica | cat |
dc.subject.classification | Òptica integrada | cat |
dc.subject.other | Photonics | eng |
dc.subject.other | Integrated optics | eng |
dc.title | Bipolar pulsed excitation of erbium-doped nanosilicon light emitting diodes | eng |
dc.type | info:eu-repo/semantics/article | - |
dc.type | info:eu-repo/semantics/publishedVersion | - |
dc.identifier.idgrec | 600585 | - |
dc.relation.projectID | info:eu-repo/grantAgreement/EC/FP7/224312/EU//HELIOS | - |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | - |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) Publicacions de projectes de recerca finançats per la UE |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
600585.pdf | 650.08 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.