Please use this identifier to cite or link to this item:
https://dipositint.ub.edu/dspace/handle/2445/47378
Title: | Stability of hydrogenated nanocrystalline silicon thin-film transistors |
Author: | Orpella, Albert Voz Sánchez, Cristóbal Puigdollers i González, Joaquim Dosev, D. Fonrodona Turon, Marta Soler Vilamitjana, David Bertomeu i Balagueró, Joan Asensi López, José Miguel Andreu i Batallé, Jordi Alcubilla González, Ramón |
Keywords: | Pel·lícules fines Silici Nanocristalls Semiconductors Catàlisi Deposició química en fase vapor Thin films Silicon Nanocrystals Semiconductors Catalysis Chemical vapor deposition |
Issue Date: | 2001 |
Publisher: | Elsevier B.V. |
Abstract: | Hydrogenated nanocrystalline silicon thin-films were obtained by catalytic chemical vapour deposition at low substrate temperatures (150°C) and high deposition rates (10 Å/s). These films, with crystalline fractions over 90%, were incorporated as the active layers of bottom-gate thin-film transistors. The initial field-effect mobilities of these devices were over 0.5 cm 2/V s and the threshold voltages lower than 4 V. In this work, we report on the enhanced stability of these devices under prolonged times of gate bias stress compared to amorphous silicon thin-film transistors. Hence, they are promising candidates to be considered in the future for applications such as flat-panel displays. |
Note: | Versió postprint del document publicat a: http://dx.doi.org/10.1016/S0040-6090(01)01290-1 |
It is part of: | Thin Solid Films, 2001, vol. 395, num. 1-2, p. 334-337 |
URI: | http://hdl.handle.net/2445/47378 |
Related resource: | http://dx.doi.org/10.1016/S0040-6090(01)01290-1 |
ISSN: | 0040-6090 |
Appears in Collections: | Articles publicats en revistes (Física Aplicada) |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
171329.pdf | 95.1 kB | Adobe PDF | View/Open |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.