Please use this identifier to cite or link to this item:
https://dipositint.ub.edu/dspace/handle/2445/52832
Title: | Spatial mapping of exciton lifetimes in single ZnO nanowires |
Author: | Reparaz, J. S. Callsen, G. Wagner, M. R. Güell Vilà, Frank Morante i Lleonart, Joan Ramon Sotomayor Torres, C. M. Hoffmann, A. |
Keywords: | Nanoelectrònica Semiconductors Optoelectrònica Òxid de zinc Luminescència Nanoelectronics Semiconductors Optoelectronics Zinc oxide Luminescence |
Issue Date: | 2013 |
Publisher: | AIP Publishing |
Abstract: | We investigate the spatial dependence of the exciton lifetimes in single ZnO nanowires. We have found that the free exciton and bound exciton lifetimes exhibit a maximum at the center of nanowires, while they decrease by 30% towards the tips. This dependence is explained by considering the cavity-like properties of the nanowires in combination with the Purcell effect. We show that the lifetime of the bound-excitons scales with the localization energy to the power of 3/2, which validates the model of Rashba and Gurgenishvili at the nanoscale. |
Note: | Reproducció del document publicat a: http://dx.doi.org/10.1063/1.4808441 |
It is part of: | APL Materials, 2013, vol. 1, p. 012103-1-012103-7 |
URI: | https://hdl.handle.net/2445/52832 |
Related resource: | http://dx.doi.org/10.1063/1.4808441 |
ISSN: | 2166-532X |
Appears in Collections: | Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) |
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