Please use this identifier to cite or link to this item: https://dipositint.ub.edu/dspace/handle/2445/59961
Title: Inkjet printing of flexible MOS structures based on graphene and high-k dielectrics
Author: Olmedo Ferrer, Omar
Director/Tutor: Cirera Hernández, Albert
Keywords: Metall-òxid-semiconductors
Impressió digital
Treballs de fi de màster
Metal oxide semiconductors
Digital printing
Master's theses
Issue Date: Jul-2014
Abstract: MOS structures have been inkjet printed using silver, hafnium oxide (HfO2) and reduced graphene oxide (rGO). Main drawbacks with inkjet printing and electrospray deposition have been overcome. C-V characteristics of these devices have been measured and common phenomenology has been established. Deviations from known theory as well as technical improvement have been proposed.
Note: Màster Oficial en Física Avançada, Facultat de Física, Universitat de Barcelona, Curs: 2014, Tutors: Olga Casals i Albert Cirera
URI: https://hdl.handle.net/2445/59961
Appears in Collections:Màster Oficial - Física Avançada

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