Browsing by Author Puigdollers i González, Joaquim

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Showing results 1 to 14 of 14
Issue DateTitleAuthor(s)
31-Mar-2014Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistorsMarsal, A.; Carreras Seguí, Paz; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Galindo, S.; Alcubilla González, Ramón; Bertomeu i Balagueró, Joan; Antony, Aldrin
2002Electronic transport in low temperature nanocrystalline silicon thin-film transistors obtained by Hot-Wire CVDPuigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Orpella, Albert; Martín, I.; Soler Vilamitjana, David; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Alcubilla González, Ramón
31-Oct-2020Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar CellsTom, Thomas; López-Pintó, Nicolau; Asensi López, José Miguel; Andreu i Batallé, Jordi; Bertomeu i Balagueró, Joan; Ros Costals, Eloi; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal
1997Infrared characterization of a-Si:H/a-Si1-xCx:H interfacesBertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Asensi López, José Miguel; Andreu i Batallé, Jordi
2000Microcrystalline silicon thin film transistors obtained by Hot-Wire CVDPuigdollers i González, Joaquim; Orpella, Albert; Alcubilla González, Ramón; Dosev, D.; Pallarés Curto, Jordi; Peiró, D.; Voz Sánchez, Cristóbal; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Marsal Garví, Lluís F. (Lluís Francesc)
1993On the determination of the interface density of states in a-Si:H/a-SiC:H multilayersBertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Asensi López, José Miguel; Andreu i Batallé, Jordi
2009Optoelectronic properties of CuPc thin films deposited at different substrate temperaturesDella Pirriera, M.; Puigdollers i González, Joaquim; Voz Sánchez, Cristóbal; Stella, Marco; Bertomeu i Balagueró, Joan; Alcubilla González, Ramón
2008Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°CMuñoz Ramos, David; Voz Sánchez, Cristóbal; Martin Garcia, Isidro; Orpella, Albert; Puigdollers i González, Joaquim; Alcubilla González, Ramón; Villar, Fernando; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Damon-Lacoste, J.; Roca i Cabarrocas, P. (Pere)
2001Stability of hydrogenated nanocrystalline silicon thin-film transistorsOrpella, Albert; Voz Sánchez, Cristóbal; Puigdollers i González, Joaquim; Dosev, D.; Fonrodona Turon, Marta; Soler Vilamitjana, David; Bertomeu i Balagueró, Joan; Asensi López, José Miguel; Andreu i Batallé, Jordi; Alcubilla González, Ramón
1993Structure of a-Si:H/a-Si1-xCx:H multilayers deposited in a reactor with automated substrate holderBertomeu i Balagueró, Joan; Asensi López, José Miguel; Puigdollers i González, Joaquim; Andreu i Batallé, Jordi; Morenza Gil, José Luis
12-Mar-2010Study of Organic Semiconductors for Device ApplicationsStella, Marco
1996Study of post-deposition contamination in low-temperature deposited polysilicon filmsBertomeu i Balagueró, Joan; Puigdollers i González, Joaquim; Peiró, D.; Cifre, J.; Delgado Nieto, Juan Carlos; Andreu i Batallé, Jordi
2003Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon filmsVoz Sánchez, Cristóbal; Martin Garcia, Isidro; Orpella, Albert; Puigdollers i González, Joaquim; Vetter, M.; Alcubilla González, Ramón; Soler Vilamitjana, David; Fonrodona Turon, Marta; Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi
2000Thin Film Transistors obtained by Hot-Wire CVDPuigdollers i González, Joaquim; Orpella, Albert; Dosev, D.; Voz Sánchez, Cristóbal; Pallarés Curto, Jordi; Marsal Garví, Lluís F. (Lluís Francesc); Bertomeu i Balagueró, Joan; Andreu i Batallé, Jordi; Alcubilla González, Ramón; Peiró, D.